2026
June 29, 2026
MINEBEA MITSUMI Inc.
Minebea Power Semiconductor Device Inc. has expanded its Lineup of 3.3 kV IGBT Modules
- Flexible product selection to meet specific needs, ranging from 450 to 800 A, using the industry-standard "LV-nHPD2 *1" package -
Minebea Power Semiconductor Device Inc. (CEO: Masahiko Suzuki; Headquarters: Minato-ku, Tokyo; hereinafter "Minebea Power Semiconductor Device"), a subsidiary of the MinebeaMitsumi Group, has expanded its lineup of the "LV-nHPD2 *1" series of low-inductance IGBT modules with a rated voltage of 3.3 kV for power conversion systems used in railway vehicles, power infrastructure, and large-scale industrial equipment (such as power conditioners (PCS) and motor drive units for renewable energy).
With the addition of two newly developed products—the "MBM600FS33G2" (600A rated) and the "MBM800GS33G2" (800A rated)—and the conventional product, "MBM450FS33F" (450A rated), the company has established a system that allows customers to select the device best suited to their inverter capacity and reliability design from a total of three output levels.
Minebea Power Semiconductor Device will leverage the synergies derived from the MinebeaMitsumi Group's INTEGRATED*2 concept and its core "Eight Spears" business strategy to contribute to the development of a sustainable social infrastructure through continuous innovation in power semiconductor technology.
- *1 LV-nHPD2: Low Voltage - next High Power Density Dual
- *2 This term was adopted with the intended meaning "to be combined" rather than "to sum up".
Create new value through synergy by combining all the resources of our group.
Product Photo
Background of Development
As the transition to a decarbonized society progresses, driven by the expansion of renewable energy and the electrification of transportation infrastructure, power converters are required to offer even higher efficiency, smaller sizes, and long-term reliability capable of withstanding severe load fluctuations.
By introducing our proprietary side-gate structure (G2 version), which achieves even lower losses, in addition to our proven trench-type IGBTs (F version), we can respond precisely to diversifying market needs, ranging from standard specifications to high-capacity and high-load operations.
Comparison of New and Conventional Product Lineups
Customers can choose from the following three types based on their required output current and operating temperature conditions.
| Item | MBM450FS33F | MBM600FS33G2 | MBM800GS33G2 |
|---|---|---|---|
| Status | Conventional Product | New Product | New Product |
| Rated current | 450A | 600A | 800A |
| Configuration | 2in1 (Half-bridge) | 2in1 (Half-bridge) | 2in1 (Half-bridge) |
| Chip Technology | Trench IGBT (F-version) | Side-gate IGBT (G2-version) | Side-gate IGBT (G2-version) |
| Max. Junction Temperature(Tj(max)) | 150°C | 150°C | 175°C |
| Package | LV-nHPD2 | LV-nHPD2 | LV-nHPD2 |
| Interconnection Technology | Standard specification | Standard specification | Cu sintering High-strength Al wire |
| Features | Standard model with a proven track record | Next-generation low-loss model | High-output & high-power-cycle model |
Key Features
1. Adoption of Industry-Standard Package with Excellent Scalability
By adopting the "LV-nHPD2" package with industry-standard outer dimensions, it is easy to change the current rating (450A, 600A, or 800A) while maintaining the same housing design. Furthermore, the internal structure suppresses current imbalance during parallel connection, enabling flexible expansion (scalability) up to megawatt-class systems.
2. Contribution to Higher System Efficiency and Downsizing (600A / 800A Products)
The two new models are equipped with our proprietary next-generation chip, the "Side-gate structure IGBT (G2-version)". Compared to the conventional product (F-version), we have successfully reduced VCE(sat) by approximately 25% and Eon+Err by approximately 30%. This contributes significantly to improving power conversion efficiency, simplifying cooling mechanisms, and minimizing the overall size of the equipment.
Fig. 1: Loss Tradeoff: Conventional (F-version) vs. New (G2-version) (Measurement condition : Ic=600A,Tj=150°C)
3. Operation up to 175°C Enabled by Advanced Interconnection Technology (800A Product)
For the 800A rated product (MBM800GS33G2), which delivers the maximum current in the series, Cu (copper) sintering and high-strength Al wire bonding have been adopted. We have confirmed an exceptionally high-power cycle capability of 3.5 million cycles (3.5×106)—more than three times the stringent target (1 million cycles (1×106)) required by the European railway standard project (Roll2Rail). Supporting continuous operation at a maximum junction temperature of 175°C, this product is well-suited for next-generation infrastructure equipment that demands both high current and long-term reliability.
Fig. 2: Power Cycle Test Results & Conditions (MBM800GS33G2)
About Minebea Power Semiconductor Device
Minebea Power Semiconductor Device is a semiconductor manufacturer that provides power semiconductor products, which are key devices in the electrification and motorization of industries and social infrastructure. It has established a solid position in a high-growth end market with its highly competitive product portfolio by producing numerous cost-competitive products that achieve both miniaturization and high performance based on its advanced basic technology assets and module fabrication technology. In particular, Minebea Power Semiconductor Device has superior technologies and products backed by its strong technological development capabilities in power semiconductors such as high-voltage SiC, high-voltage IGBT, SG (side gate)-IGBT for EV, high-voltage IC, and diodes for alternators.
About MinebeaMitsumi
MinebeaMitsumi is an INTEGRATED precision components manufacturer. The company specializes in ultra-precision technologies, ranging from core products such as miniature and small-diameter ball bearings—which ensure smooth machine rotation—to protection ICs for single-cell lithium-ion batteries. The company's diverse portfolio includes motors, sensors, and semiconductors. While often unseen, MinebeaMitsumi's ultra-precision technologies support daily life across a wide array of fields, including home appliances (air conditioners, vacuum cleaners, and hair dryers), gaming consoles, IT devices like smartphones and PCs, as well as automotive, aerospace, and medical equipment.
| Media inquiries | Corporate Communications and Investor Relations Office, MinebeaMitsumi Inc. Phone: +81-(0)3-6758-6703 Fax: +81-(0)3-6758-6718 E-mail: koffice@minebeamitsumi.com |
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